Orientation-dependent stability and quantum-confinement effects of silicon carbide nanowires

Details Orientation-dependent stability and quantum-confinement effects of silicon carbide nanowires Orientation-dependent stability and quantum-confinement effects of silicon carbide nanowires

2009-04-16

arxiv.org/abs/0904.2421v1

Physics

Condensed Matter

Materials Science

9 pages, 5 figures

Scientific paper

The energetic stability and electronic properties of hydrogenated silicon carbide nanowires (SiCNWs) with zinc blende (3C) and wurtzite (2H) structures are investigated using first-principles calculations within density functional theory and generalized gradient approximation. The [111]-orientated 3C-SiCNWs are energetically more stable than other kinds of NWs with similar size. All the NWs have direct band gaps except the 3C-SiCNWs orientating along [112] direction. The band gaps of these NWs decrease with the increase of wire size, due to the quantum-confinement effects. The direct-band-gap features can be kept for the 3C-SiCNWs orientating along [111] direction with diameters up to 2.8 nm. The superior stability and electronic structures of the [111]-orientated 3C-SiCNWs are in good agreement with the experimental results.

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