Organic small molecule field-effect transistors with Cytop(TM) gate dielectric: eliminating gate bias stress effects

Details Organic small molecule field-effect transistors with Cytop(TM) gate dielectric: eliminating gate bias stress effects Organic small molecule field-effect transistors with Cytop(TM) gate dielectric: eliminating gate bias stress effects

2007-02-20

arxiv.org/abs/cond-mat/0702472v1

Appl. Phys. Lett. 90, 092104 (2007)

Physics

Condensed Matter

Materials Science

4 pages, 3 figures, to be published in Appl. Phys. Lett

Scientific paper

10.1063/1.2709894

We report on organic field-effect transistors with unprecedented resistance against gate bias stress. The single crystal and thin-film transistors employ the organic gate dielectric Cytop(TM). This fluoropolymer is highly water repellent and shows a remarkable electrical breakdown strength. The single crystal transistors are consistently of very high electrical quality: near zero onset, very steep subthreshold swing (average: 1.3 nF V/(dec cm2)) and negligible current hysteresis. Furthermore, extended gate bias stress only leads to marginal changes in the transfer characteristics. It appears that there is no conceptual limitation for the stability of organic semiconductors in contrast to hydrogenated amorphous silicon.

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