Order and Creep in Flux Lattices and CDWs Pinned by Planar Defects

Physics – Condensed Matter – Disordered Systems and Neural Networks

Scientific paper

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Scientific paper

10.1103/PhysRevLett.101.267005

The influence of randomly distributed point impurities \emph{and} planar defects on the order and transport in type-II superconductors and related systems is considered theoretically. For planar defects of identical orientation the flux line lattice exhibits a new glassy phase dominated by the planar defects with a finite compressibility, a transverse Meissner effect, large sample to sample fuctuations of the susceptibility and an exponential decay of translational long range order. The flux creep resistivity for currents $J$ parallel to the defects is $\rho(J)\sim \exp-(J_0/J)^{3/2}$ . Strong disorder enforces an array of dislocations to relax shear strain.

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