Orbital Disordering and metal-insulator transition with hole-doping in perovskite-type vanadium oxides

Details Orbital Disordering and metal-insulator transition with hole-doping in perovskite-type vanadium oxides Orbital Disordering and metal-insulator transition with hole-doping in perovskite-type vanadium oxides

2005-05-08

arxiv.org/abs/cond-mat/0505190v1

Physics

Condensed Matter

Strongly Correlated Electrons

9pages, 4figures

Scientific paper

10.1103/PhysRevB.72.024460

Filling-control metal-insulator transitions (MITs) and related electronic phase diagrams have been investigated for hole-doped vanadium oxides, Pr_{1-x}Ca_xVO_3, Nd_{1-x}Sr_xVO_3 and Y_{1-x}Ca_xVO_3, with perovskite structure. The increase of the doping level x causes the melting of the G-type (and C-type) orbital order, prior to or concomitantly with the MIT, due partly to the doped-hole motion and partly to the ramdom potential arising from the quenched disorder. In particular, the G-type spin- and C-type orbital-ordered phase present in Y_{1-x}Ca_xVO_3 disappears immediately upon hole doping, around x=0.02. On the other hand, the critical doping level x for MIT is governed by the electron-correlation strength of the undoped parent compound.

Affiliated with

Also associated with

No associations

Rating

Orbital Disordering and metal-insulator transition with hole-doping in perovskite-type vanadium oxides does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Orbital Disordering and metal-insulator transition with hole-doping in perovskite-type vanadium oxides, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Orbital Disordering and metal-insulator transition with hole-doping in perovskite-type vanadium oxides will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-484777