Optimizing Transistor Performance of Percolating Carbon Nanotube Networks

Details Optimizing Transistor Performance of Percolating Carbon Nanotube Networks Optimizing Transistor Performance of Percolating Carbon Nanotube Networks

2010-04-22

arxiv.org/abs/1004.4009v1

Physics

Condensed Matter

Materials Science

Scientific paper

In percolating networks of mixed metallic and semiconducting CNTs, there is a tradeoff between high on-current (dense networks) and high on/off ratio (sparse networks in which the metallic CNT fraction is not percolating). Experiments on devices in a transistor configuration and Monte Carlo simulations were performed to determine the scaling behavior of device resistivity as a function of channel length (L) for CNT density p in the range 0.04 - 1.29 CNT/{\mu}m^2 in the on- and off-states. Optimized devices with field-effect mobility up to 50 cm^2/Vs at on/off ratio > 10^3 were obtained at W = 50 {\mu}m, L > 70 {\mu}m for p = 0.54 - 0.81 CNTs/{\mu}m^2.

Affiliated with

Also associated with

No associations

Rating

Optimizing Transistor Performance of Percolating Carbon Nanotube Networks does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Optimizing Transistor Performance of Percolating Carbon Nanotube Networks, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optimizing Transistor Performance of Percolating Carbon Nanotube Networks will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-693559