Optimized stray-field-induced enhancement of the electron spin precession by buried Fe gates

Details Optimized stray-field-induced enhancement of the electron spin precession by buried Fe gates Optimized stray-field-induced enhancement of the electron spin precession by buried Fe gates

2007-09-13

arxiv.org/abs/0709.2120v1

Applied Physics Letters 91, 162507 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 2 figures

Scientific paper

10.1063/1.2800289

The magnetic stray field from Fe gates is used to modify the spin precession frequency of InGaAs/GaAs quantum-well electrons in an external magnetic field. By using an etching process to position the gates directly in the plane of the quantum well, the stray-field influence on the spin precession increases significantly compared with results from previous studies with top-gated structures. In line with numerical simulations, the stray-field-induced precession frequency increases as the gap between the ferromagnetic gates is reduced. The inhomogeneous stray field leads to additional spin dephasing.

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