Optimal doping and entropic origin of giant thermopower in doped Mott insulators

Details Optimal doping and entropic origin of giant thermopower in doped Mott insulators Optimal doping and entropic origin of giant thermopower in doped Mott insulators

2011-04-23

arxiv.org/abs/1104.4537v1

Physics

Condensed Matter

Strongly Correlated Electrons

5 pages, 3 figures, LaTeX

Scientific paper

We study the Seebeck coefficient of the Hubbard model on the 3-dimensional FCC lattice at various fillings and interaction strength using dynamical mean-field theory for the one-band Hubbard model. It is shown to exhibit a giant Seebeck coefficient at strong coupling that feeds off the electronic frustration of the FCC lattice. In addition, we find that there is an optimal doping. The high-frequency limit of the thermopower gives a reliable estimate of the DC limit at weak to intermediate couplings, while the Kelvin approach is useful in the strongly interacting case. The latter result shows that in doped Mott insulators, the enhancement of the thermopower can be understood on entropic grounds for all temperatures.

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