Optically induced transport properties of freely suspended semiconductor submicron channels

Details Optically induced transport properties of freely suspended semiconductor submicron channels Optically induced transport properties of freely suspended semiconductor submicron channels

2008-05-15

arxiv.org/abs/0805.2230v1

Appl. Phys. Lett. 93, 071107 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.2970035

We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds.

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