Optically induced coherent intra-band dynamics in disordered semiconductors

Details Optically induced coherent intra-band dynamics in disordered semiconductors Optically induced coherent intra-band dynamics in disordered semiconductors

2001-11-21

arxiv.org/abs/cond-mat/0111409v1

Phys. Rev. B 65, (2002) 085306

Physics

Condensed Matter

Disordered Systems and Neural Networks

to be published in Physical Review B15 February 2002

Scientific paper

10.1103/PhysRevB.65.085306

On the basis of a tight-binding model for a strongly disordered semiconductor with correlated conduction- and valence band disorder a new coherent dynamical intra-band effect is analyzed. For systems that are excited by two, specially designed ultrashort light-pulse sequences delayed by tau relatively to each other echo-like phenomena are predicted to occur. In addition to the inter-band photon echo which shows up at exactly t=2*tau relative to the first pulse, the system responds with two spontaneous intra-band current pulses preceding and following the appearance of the photon echo. The temporal splitting depends on the electron-hole mass ratio. Calculating the population relaxation rate due to Coulomb scattering, it is concluded that the predicted new dynamical effect should be experimentally observable in an interacting and strongly disordered system, such as the Quantum-Coulomb-Glass.

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