Optical spin injection and spin lifetime in Ge heterostructures

Details Optical spin injection and spin lifetime in Ge heterostructures Optical spin injection and spin lifetime in Ge heterostructures

2011-11-22

arxiv.org/abs/1111.5209v1

Phys. Rev. Lett. 108, 156603 (2012)

Physics

Condensed Matter

Materials Science

5 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.108.156603

We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allows us to achieve high spin-polarization efficiencies and to resolve the spin dynamics of holes and electrons. The circular polarization degree of the direct-gap photoluminescence exceeds the theoretical bulk limit, yielding ~37% and ~85% for transitions with heavy and light holes states, respectively. The spin lifetime of holes at the top of the valence band is found to be ~0.5 ps and it is governed by transitions between heavy and light hole states. Electrons at the bottom of the conduction band, on the other hand, have a spin lifetime that exceeds 5 ns below 150 K. Theoretical analysis of the electrons spin relaxation indicates that phonon-induced intervalley scattering dictates the spin lifetime.

Affiliated with

Also associated with

No associations

Rating

Optical spin injection and spin lifetime in Ge heterostructures does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Optical spin injection and spin lifetime in Ge heterostructures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical spin injection and spin lifetime in Ge heterostructures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-553498