Optical Properties of Manganese Doped Wide Band Gap ZnS and ZnO

Details Optical Properties of Manganese Doped Wide Band Gap ZnS and ZnO Optical Properties of Manganese Doped Wide Band Gap ZnS and ZnO

2011-07-26

arxiv.org/abs/1107.5178v1

Optical Materials 31 (2009) 1768-1771

Physics

Condensed Matter

Materials Science

17 pages, 4 figures, 32 references

Scientific paper

10.1016/j.optmat.2008.12.031

Optical properties of ZnMnO layers grown at low temperature by Atomic Layer Deposition and Metalorganic Vapor Phase Epitaxy are discussed and compared to results obtained for ZnMnS samples. Present results suggest a double valence of Mn ions in ZnO lattice. Strong absorption, with onset at about 2.1 eV, is tentatively related to Mn 2+ to 3+ photoionization. Mechanism of emission deactivation in ZnMnO is discussed and is explained by the processes following the assumed Mn 2+ to 3+ recharging.

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