Optical probe of electrostatic doping in an n-type Mott insulator

Details Optical probe of electrostatic doping in an n-type Mott insulator Optical probe of electrostatic doping in an n-type Mott insulator

2007-02-15

arxiv.org/abs/cond-mat/0702351v1

Phys. Rev. B 75, 155103 (2007)

Physics

Condensed Matter

Strongly Correlated Electrons

4 figures

Scientific paper

10.1103/PhysRevB.75.155103

Electrostatic doping into an $n$-type Mott insulator Sm$_{2}$CuO$_{4}$ has been successfully achieved with use of the heterojunction with an $n$-type band semiconductor Nb-doped SrTiO$_{3}$. The junction exhibits rectifying current-voltage characteristics due to the interface band discontinuity and the formation of depleted region. The application of reverse bias electric field on this junction enables the field-effect electron doping (presumably up to 6% per Cu atom) to the Mott insulator. The electro-modulation absorption spectroscopy could clearly show a large modification of the Mott-gap state accompanying the spectral weight transfer to the lower-energy region, reminiscent of formation of a metallic state.

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