Optical control of energy-level structure of few electrons in AlGaAs/GaAs quantum dots

Details Optical control of energy-level structure of few electrons in AlGaAs/GaAs quantum dots Optical control of energy-level structure of few electrons in AlGaAs/GaAs quantum dots

2008-01-02

arxiv.org/abs/0801.0364v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

To appear in NanoLetters

Scientific paper

Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of energy-level structure and electron population is demonstrated by monitoring the low-lying transitions of the electrons from the lowest quantum-dot energy shells by resonant inelastic light scattering. These findings open the way to the manipulation of single electrons in these quantum dots without the need of external metallic gates.

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