Optical Characterisation of MOVPE Grown Vertically Correlated InAs/GaAs Quantum Dots

Details Optical Characterisation of MOVPE Grown Vertically Correlated InAs/GaAs Quantum Dots Optical Characterisation of MOVPE Grown Vertically Correlated InAs/GaAs Quantum Dots

2007-08-10

arxiv.org/abs/0708.1468v1

Dans European Nano Systems Worshop - ENS 2006, Paris : France (2006)

Physics

Condensed Matter

Materials Science

Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)

Scientific paper

Structures with self-organised InAs quantum dots in a GaAs matrix were grown by the low pressure metal-organic vapour phase epitaxy (LP-MOVPE) technique. Photoluminescence in combination with photomodulated reflectance spectroscopy were used as the main characterisation methods for the growth optimisation. Results show that photoreflectance spectroscopy is an excellent tool for characterisation of QD structures wetting layers (thickness and composition) and for identification of spacers in vertically stacked QDs structures.

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