Optical and electrical properties of iodine-doped HgCdTe alloys and superlattices grown by metalorganic molecular beam epitaxy

Details Optical and electrical properties of iodine-doped HgCdTe alloys and superlattices grown by metalorganic molecular beam epitaxy Optical and electrical properties of iodine-doped HgCdTe alloys and superlattices grown by metalorganic molecular beam epitaxy

Sep 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2554..109s&link_type=abstract

Proc. SPIE Vol. 2554, p. 109-122, Growth and Characterization of Materials for Infrared Detectors II, Randolph E. Longshore; Jan

Physics

Scientific paper

The electrical and optical properties of iodine doped n-type HgCdTe alloys and superlattices grown by metalorganic molecular beam epitaxy using ethyliodide are reviewed. The rationale for the use of iodine rather than indium as the dopant species and the incorporation kinetics of iodine at the growth surface are discussed. The electrical and optical properties of iodine- doped CdTe and HgCdTe (x equals 0.24) are presented for carrier concentrations between 10(superscript 15) and 10(superscript 18) cm(superscript -3), as determined by Hall effect measurements and low- and room-temperature photoluminescence spectroscopy. These samples show strong room temperature excitonic effects due to free exciton and band to band recombination as determined by photoluminescence excitation spectroscopy. The electrical and optical properties of iodine-doped HgCdTe-CdTe superlattices also are discussed based on magnetoluminescence measurements in tilted magnetic fields of up to 7 Tesla in Voigt and Faraday geometry.

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