One-by-one trap activation in silicon nanowire transistors

Details One-by-one trap activation in silicon nanowire transistors One-by-one trap activation in silicon nanowire transistors

2010-10-21

arxiv.org/abs/1010.4456v1

Nature Communications 1:92 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

One file with paper and supplementary information

Scientific paper

10.1038/ncomms1092

Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been identified as the main source of noise at low frequency. It often originates from an ensemble of a huge number of charges trapping and detrapping. However, a deviation from the well-known model of 1/f noise is observed for nanoscale MOSFETs and a new model is required. Here, we report the observation of one-by-one trap activation controlled by the gate voltage in a nanowire MOSFET and we propose a new low-frequency-noise theory for nanoscale FETs. We demonstrate that the Coulomb repulsion between electronically charged trap sites avoids the activation of several traps simultaneously. This effect induces a noise reduction by more than one order of magnitude. It decreases when increasing the electron density in the channel due to the electrical screening of traps. These findings are technologically useful for any FETs with a short and narrow channel.

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