On the theory of domain switching kinetics in ferroelectric thin films

Details On the theory of domain switching kinetics in ferroelectric thin films On the theory of domain switching kinetics in ferroelectric thin films

2010-07-31

arxiv.org/abs/1008.0093v1

Physics

Condensed Matter

Materials Science

4 pages, four postscript figures

Scientific paper

We investigate theoretically the polarization switching kinetics in ferroelectric thin films. In such substances, the domain walls are pinned by (usually dipole) defects, which are present also in ordered samples as technologically unavoidable impurities. This random interaction with dipole pinning centers results, in particular, in exponentially broad distribution of switching times. Under supposition of low pinning centers concentration, we derive the distribution function of switching times showing that it is not simply Lorentzian (as it was first suggested by Tagantsev et al [\prb, {\bf 66}, 214109 (2002)] ), but is a "square of Lorentzian", which is due to the vector nature of electric field. This improved formalism delivers a better description of available experimental data and elucidates the physical mechanism of domain switching times distribution.

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