On the possibility of obtaining MOSFET-like performance and sub-60 mV/decade swing in 1D broken-gap tunnel transistors

Details On the possibility of obtaining MOSFET-like performance and sub-60 mV/decade swing in 1D broken-gap tunnel transistors On the possibility of obtaining MOSFET-like performance and sub-60 mV/decade swing in 1D broken-gap tunnel transistors

2010-11-23

arxiv.org/abs/1011.5241v1

IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 12, PP. 3222-3230, 2010

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

34 pages, 11 figures

Scientific paper

10.1109/TED.2010.2079250

Tunneling field-effect transistors (TFETs) have gained a great deal of recent interest due to their potential to reduce power dissipation in integrated circuits. One major challenge for TFETs so far has been achieving high drive currents, which is a prerequisite for high-performance operation. In this paper we explore the performance potential of a 1D TFET with a broken-gap heterojunction source injector using dissipative quantum transport simulations based on the nonequilibrium Green's function formalism, and the carbon nanotube bandstructure as the model 1D material system. We provide detailed insights into broken-gap TFET (BG-TFET) operation, and show that it can indeed produce less than 60mV/decade subthreshold swing at room temperature even in the presence of electron-phonon scattering. The 1D geometry is recognized to be uniquely favorable due to its superior electrostatic control, reduced carrier thermalization rate, and beneficial quantum confinement effects that reduce the off-state leakage below the thermionic limit. Because of higher source injection compared to staggered-gap and homojunction geometries, BG-TFET delivers superior performance that is comparable to MOSFET's. BG-TFET even exceeds the MOSFET performance at lower supply voltages (VDD), showing promise for low-power/high-performance applications.

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