On the Possibility of an Electronic-structure Modulation Transistor

Details On the Possibility of an Electronic-structure Modulation Transistor On the Possibility of an Electronic-structure Modulation Transistor

2008-11-30

arxiv.org/abs/0812.0123v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

We present a novel electronic-structure modulation transistor (EMT), which can possibly be used for post-CMOS logic applications. The device principle is based on the bandwidth modulation of a midgap or near-midgap localized state in the channel by a gate voltage. A single-band tight-binding method coupled with non-equilibrium Green's function formalism for quantum transport is employed to predict the IV characteristics. Our objective is to confirm if an EMT has a self gain and if it can overcome the 2.3kT/decade thermal limit with low supply voltage. The ON current depends on the bandwidth of the state and is limited by the quantum of conductance for a single band. The OFF current is set by the gate leakage and tunneling through the higher bands, which is expected to be small if these bands are a few eV above the energy level of the localized state.

Affiliated with

Also associated with

No associations

Rating

On the Possibility of an Electronic-structure Modulation Transistor does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with On the Possibility of an Electronic-structure Modulation Transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and On the Possibility of an Electronic-structure Modulation Transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-54736