On the non-orthogonality problem in the description of quantum devices

Details On the non-orthogonality problem in the description of quantum devices On the non-orthogonality problem in the description of quantum devices

2001-11-30

arxiv.org/abs/cond-mat/0111574v1

Physica B 272 28-30 (1999)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 1 table, 1 figure

Scientific paper

10.1016/S0921-4526(99)00343-9

An approach which allows to include the corrections from non-orthogonality of electron states in contacts and quantum dots is developed. Comparison of the energy levels and charge distributions of electrons in 1D quantum dot (QD) in equilibrium, obtained within orthogonal (OR) and non-orthogonal representations (NOR), with the exact ones shows that the NOR provides a considerable improvement, for levels below the top of barrier. The approach is extended to non-equilibrium states. A derivation of the tunneling current through a single potential barrier is performed using equations of motion for correlation functions. A formula for transient current derived by means of the diagram technique for Hubbard operators is given for the problem of QD with strongly correlated electrons interacting with electrons in contacts. The non-orthogonality renormalizes the tunneling matrix elements and spectral weights of Green functions (GFs).

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