On the nature of large-scale defect accumulations in Czochralski-grown silicon

Details On the nature of large-scale defect accumulations in Czochralski-grown silicon On the nature of large-scale defect accumulations in Czochralski-grown silicon

2010-08-27

arxiv.org/abs/1008.4694v2

Inst. Phys. Conf. Ser. 149 (1996) 219-224

Physics

Condensed Matter

Materials Science

DRIP-VI; unlikely to be available elsewhere

Scientific paper

Czochralski-grown boron-doped silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of electrically-active impurities detected in this material were found to be different in their nature and formation mechanisms from the well-known impurity clouds in a float zone-grown silicon. A classifcation of the large-scale impurity accumulations in CZ Si:B is made and point centers constituting them are analyzed in this paper. A model of the large-scale impurity accumulations in CZ-grown Si:B is also proposed.

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