On the nature of ferromagnetism in diluted magnetic semiconductors: GaAs:Mn, GaP:Mn

Details On the nature of ferromagnetism in diluted magnetic semiconductors: GaAs:Mn, GaP:Mn On the nature of ferromagnetism in diluted magnetic semiconductors: GaAs:Mn, GaP:Mn

2002-08-09

arxiv.org/abs/cond-mat/0208188v1

Europhysics Letters (2003), 61, 235-41

Physics

Condensed Matter

10 pages, 3 figures. Submitted to Europhysics Letters, June 25, 2002

Scientific paper

10.1016/S0304-8853(02)01023-5

A microscopic Hamiltonian for interacting manganese impurities in diluted magnetic semiconductors (DMS) is derived. It is shown that in p -type III-V DMS the indirect exchange between Mn impurities has similarities with the Zener mechanism in transition metal oxides. Here the mobile holes and localized states near the top of the valence band play the role of unoccupied oxygen orbitals which induce ferromagnetism. The Curie temperature estimated from the proposed kinematic exchange agrees with recent experiments on GaAs:Mn. The model is also applicable to the GaP:Mn system.

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