On the inner Double-Resonance Raman scattering process in bilayer graphene

Details On the inner Double-Resonance Raman scattering process in bilayer graphene On the inner Double-Resonance Raman scattering process in bilayer graphene

2010-08-02

arxiv.org/abs/1008.0291v1

Carbon 49, 1511-1515 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 3 figures

Scientific paper

10.1016/j.carbon.2010.11.053

The dispersion of phonons and the electronic structure of graphene systems can be obtained experimentally from the double-resonance (DR) Raman features by varying the excitation laser energy. In a previous resonance Raman investigation of graphene, the electronic structure was analyzed in the framework of the Slonczewski-Weiss-McClure (SWM) model, considering the outer DR process. In this work we analyze the data considering the inner DR process, and obtain SWM parameters that are in better agreement with those obtained from other experimental techniques. This result possibly shows that there is still a fundamental open question concerning the double resonance process in graphene systems.

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