On the Debye Effect in a Semiconductor and an Electrolyte

Details On the Debye Effect in a Semiconductor and an Electrolyte On the Debye Effect in a Semiconductor and an Electrolyte

2004-03-31

arxiv.org/abs/cond-mat/0403758v2

Physics

Condensed Matter

Materials Science

15 pages, no figures

Scientific paper

It is shown that the standard expression for the diffusive flux in a semiconductor can be transformed to the flux from the Einstein-Smoluchowski equation after making use of the "Einstein identities". Later, it is possible to use a transformation introduced in: S. Piekarski: "On the modified Fick law and its potential applications" (J.Tech.Phys.,44,2,125-131,2003). In this formalism, it is possible to formulate simple models of a semiconductor and an electrolyte and to obtain the alternative description of a Debye effect (by the Debye effect we mean here the screening of the point particle potential). Final results are compared with the standard analysis.

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