On possible spin injection at non-ideal Schottky contacts

Details On possible spin injection at non-ideal Schottky contacts On possible spin injection at non-ideal Schottky contacts

2003-05-21

arxiv.org/abs/cond-mat/0305501v2

Solid State Comm. 130, 765 (2004)

Physics

Condensed Matter

Materials Science

14 pages, 3 figures revised version 02-02-2004

Scientific paper

10.1016/j.ssc.2004.03.045

The role of the tunneling mechanisms in metal-disordered layer-semiconductor structure under spin injection at the interface is investigated. The non-ideal metal-semiconductor structure as prepared by ionized cluster beam deposition is considered, and it is shown that the depletion region of the semiconductor can be tailored to include a suitably heavily doped region near the interface. The tunneling is described within a simplified model in which the expression for the interface resistance of the metal-disordered layer-semiconductor structure is obtained. It is argued that in the case of ionized cluster beam deposited non-ideal Schottky structure a significant spin injection is achieved.

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