On-Chip Matching Networks for Radio-Frequency Single-Electron-Transistors

Details On-Chip Matching Networks for Radio-Frequency Single-Electron-Transistors On-Chip Matching Networks for Radio-Frequency Single-Electron-Transistors

2007-08-07

arxiv.org/abs/0708.1007v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures, REVTeX 4. To appear in Appl. Phys. Lett

Scientific paper

10.1063/1.2776888

In this letter, we describe operation of a radio-frequency superconducting single electron transistor (RF-SSET) with an on-chip superconducting LC matching network consisting of a spiral inductor L and its capacitance to ground. The superconducting network has a lower parasitic capacitance and gives a better matching for the RF-SSET than does a commercial chip inductor. Moreover, the superconducting network has negligibly low dissipation, leading to sensitive response to changes in the RF-SSET impedance. The charge sensitivity 2.4*10^-6 e/(Hz)^1/2 in the sub-gap region and energy sensitivity of 1.9 hbar indicate that the RF-SSET is operating in the vicinity of the shot noise limit.

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