Physics – Condensed Matter – Materials Science
Scientific paper
1996-12-11
Physics
Condensed Matter
Materials Science
6 pages, 2 figures, MRS style (enclosed), to appear in MRS Proc. 448
Scientific paper
The strain induced by lattice mismatch at the interface is responsible for the different value of the band discontinuities observed recently for the AlN/GaN (AlN on GaN) and the GaN/AlN (GaN on AlN) polar (0001) interface. We present a first-principles calculation of valence band offsets, interface dipoles, strain-induced piezoelectric fields, relaxed geometric structure, and formation energies. Our results confirm the existence of a large forward-backward asymmetry for this interface.
Bernardini Fabio
Fiorentin Vincenzo
Vanderbilt David
No associations
LandOfFree
Offsets and polarization at strained AlN/GaN polar interfaces does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Offsets and polarization at strained AlN/GaN polar interfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Offsets and polarization at strained AlN/GaN polar interfaces will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-533991