Offsets and polarization at strained AlN/GaN polar interfaces

Physics – Condensed Matter – Materials Science

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

6 pages, 2 figures, MRS style (enclosed), to appear in MRS Proc. 448

Scientific paper

The strain induced by lattice mismatch at the interface is responsible for the different value of the band discontinuities observed recently for the AlN/GaN (AlN on GaN) and the GaN/AlN (GaN on AlN) polar (0001) interface. We present a first-principles calculation of valence band offsets, interface dipoles, strain-induced piezoelectric fields, relaxed geometric structure, and formation energies. Our results confirm the existence of a large forward-backward asymmetry for this interface.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Offsets and polarization at strained AlN/GaN polar interfaces does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Offsets and polarization at strained AlN/GaN polar interfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Offsets and polarization at strained AlN/GaN polar interfaces will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-533991

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.