Observation of weak temperature dependence of spin diffusion length in highly-doped Si by using a non-local 3-terminal method

Details Observation of weak temperature dependence of spin diffusion length in highly-doped Si by using a non-local 3-terminal method Observation of weak temperature dependence of spin diffusion length in highly-doped Si by using a non-local 3-terminal method

2011-10-19

arxiv.org/abs/1110.4187v2

Physics

Condensed Matter

Materials Science

13 pages, 3 figures

Scientific paper

We conduct an experimental investigation of temperature dependence of spin diffusion length in highly-doped n-type silicon by using a non-local 3-terminal method. Whereas an effect of spin drift is not ignorable to bias- and temperature-dependence of spin signals in non-metallic systems except for the case of a non-local 4-terminal method, it is not fully conclusive how the spin drift affects spin transport properties in highly-doped Si in a non-local 3-terminal method that is often used in Si spintronics. Here, we report on temperature dependence of spin diffusion length in the Si, and it is clarified that the spin transport is less affected by an external electric field.

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