Observation of Type I/II Transition in GaAs/InGaP Heterostructure by C-V Profiling

Details Observation of Type I/II Transition in GaAs/InGaP Heterostructure by C-V Profiling Observation of Type I/II Transition in GaAs/InGaP Heterostructure by C-V Profiling

1999-03-06

arxiv.org/abs/cond-mat/9903116v1

Physics

Condensed Matter

Materials Science

2 pages, 3 figures . Submitted to 41st Electronic Materials Conference, (June-July)1999, University of California, Santa Barba

Scientific paper

It is known in the literature that InGaP alloy synthesized within a certain range of growth temperature (520 - 720 degree Centrigrade) shows Cu-Pt crystal ordering. This ordering reduces the band gap energy . It was predicted that the ordering induced modification of energy levels of InGaP lowers its conduction band edge, which could change a type I band alignment at a GaAs/InGaP heterojunction to type II . Here we report the first observation of this ordering related type I/II transition for a GaAs/InGaP heterojunction by C-V profiling experiments done at room temperature .

Affiliated with

Also associated with

No associations

Rating

Observation of Type I/II Transition in GaAs/InGaP Heterostructure by C-V Profiling does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Observation of Type I/II Transition in GaAs/InGaP Heterostructure by C-V Profiling, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Observation of Type I/II Transition in GaAs/InGaP Heterostructure by C-V Profiling will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-180018