Observation of Tunneling Current in Semiconducting Graphene p-n Junctions

Details Observation of Tunneling Current in Semiconducting Graphene p-n Junctions Observation of Tunneling Current in Semiconducting Graphene p-n Junctions

2011-11-15

arxiv.org/abs/1111.3428v1

Journal of the Physical Society of Japan 81 (2012) 014708

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

18 pages, 7 figures, to be published in Journal of the Physical Society of Japan

Scientific paper

10.1143/JPSJ.81.014708

We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n interface. A current-voltage relationship exhibiting differential resistance peak at forward bias stems from the tunneling current through the insulating region at the p-n interface. The tunneling current reflects singularities in the density of states modified by the electric field. This work suggests that the effect of carrier charge tuning by external electric field in 2D semiconductors is analogously to that by impurity doping in 3D semiconductors.

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