Observation of the single-electron regime in a highly tunable silicon quantum dot

Details Observation of the single-electron regime in a highly tunable silicon quantum dot Observation of the single-electron regime in a highly tunable silicon quantum dot

2009-10-03

arxiv.org/abs/0910.0576v3

Appl. Phys. Lett. 95, 242102 (2009) (3 pages)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures, accepted for Applied Physics Letters

Scientific paper

We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot energy levels to be probed without affecting the electron density in the leads, and vice versa. Appropriate gate biasing enables the dot occupancy to be reduced to the single-electron level, as evidenced by magnetospectroscopy measurements of the ground state of the first two charge transitions. Independent gate control of the electron reservoirs also enables discrimination between excited states of the dot and density of states modulations in the leads.

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