Observation of the Metal-Insulator Transition in Two-Dimensional n-type GaAs

Details Observation of the Metal-Insulator Transition in Two-Dimensional n-type GaAs Observation of the Metal-Insulator Transition in Two-Dimensional n-type GaAs

1998-08-24

arxiv.org/abs/cond-mat/9808251v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures

Scientific paper

10.1103/PhysRevB.58.R13338

The observation of a carrier-density driven metal-insulator transition in
n-type GaAs-based heterostructure is reported. Although weaker than in
comparable-quality p-type GaAs samples, the main features of the transition are
rather similar.

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