Observation of the "Memory Steps" in Graphene at Elevated Temperatures

Physics – Condensed Matter – Materials Science

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

17 manuscript pages

Scientific paper

We found that the current-voltage characteristics of the single-layer graphene field-effect transistors exhibit an intriguing feature - an abrupt change of the current near zero gate bias at elevated temperatures T > 500 K. The strength of the effect - referred to as the "memory step" by analogy with the "memory dips" - known phenomenon in electron glasses - depends on the rate of the voltage sweep. The slower the sweep - the more pronounced is the step in the current. Despite differences in examined graphene transistor characteristics, the "memory step" always appears near zero gate bias. The effect is reproducible and preserved after device aging. A similar feature has been previously observed in electronic glasses albeit at cryogenic temperatures and with opposite dependence on the rate of the voltage sweep. The observed "memory step" can be related to the slow relaxation processes in graphene. This new characteristic of electron transport in graphene can be used for applications in high-temperature sensors and switches.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Observation of the "Memory Steps" in Graphene at Elevated Temperatures does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Observation of the "Memory Steps" in Graphene at Elevated Temperatures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Observation of the "Memory Steps" in Graphene at Elevated Temperatures will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-155961

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.