Observation of Spin Relaxation Anisotropy in Semiconductor Quantum Wells

Details Observation of Spin Relaxation Anisotropy in Semiconductor Quantum Wells Observation of Spin Relaxation Anisotropy in Semiconductor Quantum Wells

2006-01-12

arxiv.org/abs/cond-mat/0601252v1

Phys. Rev. B 74, 033305(1-4) (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

Spin relaxation of two-dimensional electrons in asymmetrical (001) AlGaAs quantum wells are measured by means of Hanle effect. Three different spin relaxation times for spins oriented along [110], [1-10] and [001] crystallographic directions are extracted demonstrating anisotropy of D'yakonov-Perel' spin relaxation mechanism. The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well structures. It is shown that the Rashba spin-orbit splitting is about four times stronger than the Dresselhaus splitting in the studied structure.

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