Physics – Condensed Matter – Disordered Systems and Neural Networks
Scientific paper
2002-12-08
Physics
Condensed Matter
Disordered Systems and Neural Networks
9 pages, 5 figures
Scientific paper
10.1103/PhysRevLett.91.216603
We report investigations of conductance fluctuations (noise) in doped silicon at low temperatures (T$<20$K) as it is tuned through the metal-insulator transition (MIT). The scaled magnitude of noise, $\gamma_H$, increases with decrease in T following an approximate power law $\gamma_H \sim T^{-\beta}$. At low T, $\gamma_H$ diverges as $n/n_c$ crosses 1 from the metallic side. We find that the distribution function and second spectrum of the fluctuations show strong non-gaussian behavior below 20K as $n/n_c$ decreases through 1. In particular, the observed distribution function which is gaussian for $n/n_c >> 1$, develops a log-normal tail as the transition is approached from the metallic side and eventually it dominates in the critical region.
Ghosh Arindam
Kar Swastik
Raychaudhuri A. K.
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