Observation of Inter-Valley Gap Anomaly of Two Dimensional electrons in Silicon

Details Observation of Inter-Valley Gap Anomaly of Two Dimensional electrons in Silicon Observation of Inter-Valley Gap Anomaly of Two Dimensional electrons in Silicon

2005-10-21

arxiv.org/abs/cond-mat/0510599v1

Phys. Rev. Lett. 96, 076805 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 REVTEX pages, 4 figures

Scientific paper

10.1103/PhysRevLett.96.076805

We report here a systematic study of the energy gaps at the odd-integer quantum Hall states $\nu=3$ and 5 under tilted magnetic (B) fields in a high quality Si two-dimensional electron system. Out of the coincidence region, the valley splitting is independent of the in-plane B fields. However, the $\nu=3$ valley gap differs by about a factor of 3 ($\Delta_v\sim$ 0.4K vs. 1.2K) at either side of the coincidence. More surprisingly, instead of reducing to zero, the energy gaps at $\nu=3$ and 5 rise rapidly when approaching the coincidence angles. We believe that such anomaly is related to strong coupling of the nearly degenerate Landau levels.

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