Observation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene

Details Observation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene Observation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene

2008-08-18

arxiv.org/abs/0808.2452v1

Phys. Rev. Lett. 101, 257401 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.101.257401

A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G-band, hardening its higher component and softening the lower one. These two components are associated with the symmetric (S) and anti-symmetric vibration (AS) of the atoms in the two layers, the later one becoming Raman active due to inversion symmetry breaking. The phonon hardening and softening are explained by considering the selective coupling of the S and AS phonons with interband and intraband electron-hole pairs.

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