Observation of Dirac Holes and Electrons in a Topological Insulator

Details Observation of Dirac Holes and Electrons in a Topological Insulator Observation of Dirac Holes and Electrons in a Topological Insulator

2011-05-27

arxiv.org/abs/1105.5483v1

Phys.Rev.Lett.107:016801,2011

Physics

Condensed Matter

Materials Science

4 pages, 4 figures, accepted for publication in PRL

Scientific paper

10.1103/PhysRevLett.107.016801

We show that in the new topological-insulator compound Bi_{1.5}Sb_{0.5}Te_{1.7}Se_{1.3} one can achieve a surfaced-dominated transport where the surface channel contributes up to 70% of the total conductance. Furthermore, it was found that in this material the transport properties sharply reflect the time dependence of the surface chemical potential, presenting a sign change in the Hall coefficient with time. We demonstrate that such an evolution makes us observe both Dirac holes and electrons on the surface, which allows us to reconstruct the surface band dispersion across the Dirac point.

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