Observation of Coherent Charge-State Mixing in Asymmetric Bloch Transistors

Details Observation of Coherent Charge-State Mixing in Asymmetric Bloch Transistors Observation of Coherent Charge-State Mixing in Asymmetric Bloch Transistors

1999-05-06

arxiv.org/abs/cond-mat/9905065v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages including 4 figures. Paper presented at the workshop on "Macroscopic Quantum Tunneling and Dissipation", (Naples, June

Scientific paper

The reduced switching current of an excited energy-band in a Bloch transistor can be used to detect microwave-induced interband transitions. Spectroscopic measurements of the band-gap are performed by mapping the frequency dependence of the excitation threshold where the microwave photon energy and band-gap are equal. This excitation threshold also provides a probe of charge-state mixing on the island of the transistor. Any asymmetry in the junctions of the transistor makes the coherent mixing of charge-states appear as a finite gap-splitting at the electrostatic degeneracy point between states differing by one excess Cooper-pair on the island. The measured gap-splitting in an asymmetric transistor clearly demonstrates the effect.

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