Observation of a Mott insulating ground state for Sn/Ge(111) at low temperature

Details Observation of a Mott insulating ground state for Sn/Ge(111) at low temperature Observation of a Mott insulating ground state for Sn/Ge(111) at low temperature

2006-01-02

arxiv.org/abs/cond-mat/0601029v1

PHYSICAL REVIEW LETTERS 96, 126103 (2006)

Physics

Condensed Matter

Materials Science

4 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.96.126103

We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3x3) phase formed at 200 K, reverts to a new (root-3xroot-3)R30 phase below 30 K. The vertical distortion characteristic of the (3x3) phase is lost across the phase transition. Angle-resolved photoemission experiments show that concomitantly with the structural phase transition, a metal-insulator phase transition takes place. In agreement with theoretical predictions, the (root-3xroot-3)R30 ground state is interpreted as the experimental realization of a Mott insulator for a narrow half-filled band in a two-dimensional triangular lattice.

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