Oblique Hanle Effect in Semiconductor Spin Transport Devices

Details Oblique Hanle Effect in Semiconductor Spin Transport Devices Oblique Hanle Effect in Semiconductor Spin Transport Devices

2008-01-21

arxiv.org/abs/0801.3231v2

Appl. Phys. Lett. 92, 142507 (2008)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.2907497

Spin precession and dephasing ("Hanle effect") provides an unambiguous means to establish the presence of spin transport in semiconductors. We compare theoretical modeling with experimental data from drift-dominated silicon spin-transport devices, illustrating the non-trivial consequences of employing oblique magnetic fields (due to misalignment or intentional, fixed in-plane field components) to measure the effects of spin precession. Model results are also calculated for Hanle measurements under conditions of diffusion-dominated transport, revealing an expected Hanle peak-widening effect induced by the presence of fixed in-plane magnetic bias fields.

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