O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors

Details O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors

2010-06-25

arxiv.org/abs/1006.4913v1

Appl. Phys. Lett. 97, 022108 (2010)

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1063/1.3464964

We find that O-vacancy (Vo) acts as a hole trap and play a role in negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors. Photo-excited holes drifted toward the channel/dielectric interface due to small potential barriers and can be captured by Vo in the dielectrics. While Vo(+2) defects are very stable at room temperature, their original deep states are recovered via electron capture upon annealing. We also find that Vo(+2) can diffuse in amorphous phase, including hole accumulation near the interface under negative gate bias.

Affiliated with

Also associated with

No associations

Rating

O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-309641