Physics – Condensed Matter – Disordered Systems and Neural Networks

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2004-07-30

Physics

Condensed Matter

Disordered Systems and Neural Networks

4 pages, 5 figures

Scientific paper

We calculate the zero-temperature resistivity of model 3-dimensional disordered metals described by tight-binding Hamiltonians. Two different mechanisms of disorder are considered: diagonal and off-diagonal. The non-equilibrium Green function formalism provides a Landauer-type formula for the conductance of arbitrary mesoscopic systems. We use this formula to calculate the resistance of finite-size disordered samples of different lengths. The resistance averaged over disorder configurations is linear in sample length and resistivity is found from the coefficient of proportionality. Two structures are considered: (1) a simple cubic lattice with one s-orbital per site, (2) a simple cubic lattice with two d-orbitals. For small values of the disorder strength, our results agree with those obtained from the Boltzmann equation. Large off-diagonal disorder causes the resistivity to saturate, whereas increasing diagonal disorder causes the resistivity to increase faster than the Boltzmann result. The crossover toward localization starts when the Boltzmann mean free path relative to the lattice constant has a value between 0.5 and 2.0 and is strongly model dependent.

**Allen Philip B.**

Physics – Condensed Matter – Disordered Systems and Neural Networks

Scientist

**Gilman Yulia**

Physics – Condensed Matter – Other Condensed Matter

Scientist

**Goddard William A.**

Physics – Condensed Matter – Materials Science

Scientist

**Tahir-Kheli Jamil**

Physics – Condensed Matter – Superconductivity

Scientist

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