Numerical Study of Carrier Multiplication Pathways in Nanocrystalline and Bulk Form of PbSe

Details Numerical Study of Carrier Multiplication Pathways in Nanocrystalline and Bulk Form of PbSe Numerical Study of Carrier Multiplication Pathways in Nanocrystalline and Bulk Form of PbSe

2010-10-19

arxiv.org/abs/1010.4061v3

Phys. Rev. Lett. 106, 207401 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures (revised version) Accepted for publication in Physical Review Letters

Scientific paper

10.1103/PhysRevLett.106.207401

Employing the interband exciton scattering model, we have performed a numerical study of the direct photogeneration and population relaxation processes contributing to carrier multiplication (CM) in nanocrystalline and bulk PbSe. We argue that in both cases the impact ionization is the main mechanisms of CM. This explains weak contribution of the direct photogeneration to the total quantum e?ciency (QE). Investigated size scaling of QE in NCs and comparison to the bulk limit provide microscopic insight in the experimentally observed trends.

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