Numerical simulation of magnetization process in antiferromagnetic ferromagnetic bilayer with compensated interface

Details Numerical simulation of magnetization process in antiferromagnetic ferromagnetic bilayer with compensated interface Numerical simulation of magnetization process in antiferromagnetic ferromagnetic bilayer with compensated interface

2005-08-02

arxiv.org/abs/cond-mat/0508069v1

Physics

Condensed Matter

Materials Science

6 pages, 4 figures

Scientific paper

10.1016/j.jmmm.2005.10.056

The properties of antiferromagnetic ferromagnetic bilayer have been studied using self-consistent mean-field approximation for Heisenberg Hamiltonian. The perpendicular exchange coupling has been revealed in a bilayer with a compensated interface. For a uniform antiferromagnetic film a symmetrical hysteresis loop has been calculated, because the transverse instability develops within the antiferromagnetic film at certain critical value of external magnetic field. On the other hand, shifted hysteresis loop with a finite exchange bias field has been obtained for a non-uniform antiferromagnetic film consisting of various domains with perpendicular directions of the easy anisotropy axes.

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