Nucleation of Ge quantum dots on the Si(001) surface

Details Nucleation of Ge quantum dots on the Si(001) surface Nucleation of Ge quantum dots on the Si(001) surface

2009-07-27

arxiv.org/abs/0907.4665v5

Phys. Rev. B 82, 045315 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 6 figures; Fig. 4e has been improved; additional explanations have been added. To appear in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.82.045315

A direct observation of nucleation of Ge hut clusters formed by ultrahigh vacuum molecular beam epitaxy is reported for the first time. The nuclei of the pyramidal and wedge-like clusters have been observed on the wetting layer blocks and found to have different structures. The growth of the clusters of both species goes on following different scenarios: Formation of the second atomic layer of the wedge-like cluster results in rearrangement of its first layer. Its ridge structure does not replicate the structure of the nucleus. The pyramidal cluster grows without phase transitions. The structure of its vertex copies the structure of the nucleus. The wedge-like clusters contain point defects on the triangular faces and have preferential directions of growth along the ridges. The derived structure of the {105} facet corresponds to the PD model. The critical epinucleation phenomenon may be responsible for hut formation.

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