Nuclear Magnetic Resonance in a Ferromagnet-Semiconductor Heterostructure

Details Nuclear Magnetic Resonance in a Ferromagnet-Semiconductor Heterostructure Nuclear Magnetic Resonance in a Ferromagnet-Semiconductor Heterostructure

2003-07-21

arxiv.org/abs/cond-mat/0307512v1

Physics

Condensed Matter

submitted to Applied Physics Letters

Scientific paper

10.1063/1.1620685

We report the observation of nuclear magnetic resonance (NMR) in a ferromagnet-semiconductor heterostructure in the presence of a spin-polarized current. Spin-polarized electrons injected from a metallic ferromagnet generate a large nuclear spin population in a GaAs quantum well by dynamic polarization. The characteristic time for the polarization process is approximately 20 sec, and the nuclear polarization can persist for several minutes after the current is turned off. Resonant depolarization is observed in the presence of an AC magnetic field or when the injection current is modulated at the NMR frequency.

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