Novel metallic and insulating states at a bent quantum Hall junction

Details Novel metallic and insulating states at a bent quantum Hall junction Novel metallic and insulating states at a bent quantum Hall junction

2007-01-13

arxiv.org/abs/cond-mat/0701295v2

Phys. Rev. B 76, 201304(R) (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures, text + figs revised for clarity

Scientific paper

10.1103/PhysRevB.76.201304

A non-planar geometry for the quantum Hall (QH) effect is studied, whereby two quantum Hall (QH) systems are joined at a sharp right angle. When both facets are at equal filling factor nu the junction hosts a channel with non-quantized conductance, dependent on nu. The state is metallic at nu = 1/3, with conductance along the junction increasing as the temperature T drops. At nu = 1, 2 it is strongly insulating, and at nu = 3, 4 shows only weak T dependence. Upon applying a dc voltage bias along the junction, the differential conductance again shows three different behaviors. Hartree calculations of the dispersion at the junction illustrate possible explanations, and differences from planar QH structures are highlighted.

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