Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture

Details Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture

2008-03-24

arxiv.org/abs/0803.3370v2

Physics

Condensed Matter

Materials Science

18 pages, 7 figures; added 1figure and 5references

Scientific paper

We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs connected to the storage nodes of a standard SRAM cell with CIMS architecture enables fully electrical store and restore operations for nonvolatile logic information. The proposed NV-SRAM is expected to be a key component of next-generation power-gating logic systems with extremely low static-power dissipation.

Affiliated with

Also associated with

No associations

Rating

Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-615320