Nonvolatile memory effects in hybrid devices of few-layer graphene and ferroelectric polymer films

Details Nonvolatile memory effects in hybrid devices of few-layer graphene and ferroelectric polymer films Nonvolatile memory effects in hybrid devices of few-layer graphene and ferroelectric polymer films

2009-04-15

arxiv.org/abs/0904.2242v1

Physics

Condensed Matter

Materials Science

11 pages, 4 figures

Scientific paper

We report on the fabrication and electrical characterization of few-layer graphene (FLG) devices coated with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]. Highly stable and reliable resistance changes were observed under floating conditions, which were dependent on the back gate voltage applied beforehand. Nonvolatile memory functionality in the hybrid FLG-P(VDF/TrFE) devices is attributed to a remanent electric field induced by the ferroelectric polarization of the P(VDF/TrFE) layer.

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